[1]刘明芳,张小兵.半导体桥火工品点火过程中桥体电压电流特性[J].弹道学报,2010,22(04):70-72.
 LIU Ming fang,ZHANG Xiao bing.Semiconductor Bridge UI Properties in Ignition Process[J].Journal Of Ballistics,2010,22(04):70-72.
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半导体桥火工品点火过程中桥体电压电流特性
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《弹道学报》[ISSN:1004-499X/CN:32-1343/TJ]

卷:
22
期数:
2010年04期
页码:
70-72
栏目:
OA栏目
出版日期:
2010-12-30

文章信息/Info

Title:
Semiconductor Bridge UI Properties in Ignition Process
作者:
刘明芳张小兵
南京理工大学 能源与动力工程学院,南京 210094
Author(s):
LIU Mingfang ZHANG Xiaobing
School of Energy and Power Engineering, NUST, Nanjing 210094, China
关键词:
半导体桥点火性能电特性桥体尺寸
Keywords:
semiconductor bridge ignition performance electrical property size of bridge
分类号:
TJ450.1
文献标志码:
A
摘要:
为研究半导体桥点火的特性,分析了半导体桥的结构特点和电阻特性,根据桥体的工作过程建立了半导体桥电特性的计算模型,对不同几何尺寸的桥体和相同尺寸下不同氧化层厚度的桥体进行数值模拟,分析了整个过程中半导体桥两端电压和电流的变化趋势.数值模拟得到3个不同桥体尺寸的电压电流曲线.结果表明,桥体几何尺寸越大,达到熔点所需要的电压越高,即所需要消耗的输入能量越多.
Abstract:
To study the properties of Semiconductor Bridge (SCB), the structure and the resistance properties of SCB were analyzed. The calculation model of the electrical properties of SCB was established based on the above factors, and the bridges with different dimension and different oxidation layer thickness were simulated respectively. The current and voltage trend during the process of SCB working was analyzed. By numerical calculation, the distribution curves of UI properties were obtained, which were influenced by different dimension. The result shows that the bigger the bridge, the higher the voltage when the temperature reaches melting point, i.e. the more input energy.

参考文献/References:

[1]LEE Kyenam. Characteristics of plasma generated by polysilicon semiconductor bridge(SCB)[J]. Sensors and Actuators A, 2002, 96: 252-257.
[2]MARX K D, BICKWS R W. Characterization and electrical modeling of semiconductor bridges, SAND 978246[R]. 1997.
[3]祝明水,何碧,胡美娥,等. 半导体桥动态阻抗的试验研究[J]. 爆破器材,2007,36(2):18-20.ZHU Mingshui, HE Bi, HU Meie, et al. Study on dynamic resistance of semiconductor bridge[J]. Explosive Materials, 2007, 36(2): 18-20.(in Chinese)
[4]祝逢春,徐振相,周彬,等. SCB火工品的研究与发展[J]. 爆破器材,2003,32(1):18-23.ZHU Fengchun, XU Zhenxiang, ZHOU Bin, et al. The research and development on semiconductor bridge initiator[J]. Explosive Materials, 2003, 32(1): 18-23.(in Chinese)

备注/Memo

备注/Memo:
收稿日期:20100419基金项目:江苏省自然科学基金项目(BK2007531);高校博士学科点基金项目(20060288019)作者简介:刘明芳(1981- ),女,博士研究生,研究方向为兵器发射理论与技术.
更新日期/Last Update: 2010-12-30